data sheet semiconductor http://www.yeashin.com 1 rev.03 20141209 mbr1020fct~mbr10200fct 10a schottky b a rrie r re ctifier fe a t ures ?e s c ho ttky barrier chip ?e guard ring for t r ansien t pro t ection ?e high curren t capability , low forw a r d ?e l o w re v e rse le akage curren t ?e high sur ge curr ent cap ability ?e plasti c ma terial h a s ul flammability c l assi fi cati on 9 4 v- o ?e high temper atur e so ldering : 260 o c / 10 se cond s at ter m inals ?e pb free p r odu ct at av ailable : 99% sn abov e meet ro hs env ironment su bst a nce dire ctiv e reque st m e c h an i c al d a t a ?e ca se : ito-2 20ab m o lded pl asti c ?e termina l s: plate d lead s solderab le per mil-std-750, me thod 2026 ?e polari ty : as mar k ed on body ?e m oun ting po sitio n : a n y ?e mar k ing : ty pe number maximu m ra tin g s an d electric a l charac teristic s @t a = 25 c u n l ess ot her w ise specifi ed single p hase, hal f w a v e , 60hz, re sisti v e or inductiv e load . for cap a ci tiv e load, dera t e curr ent by 20%. note: 1. measu r e d at 1.0 mhz and applied reverse voltage of 4.0v d . c. ito-220ab unit:inch(mm) characterist i c s y m b o l mbr 1020fct 1030fct 1045fct 1050fct 1060fct 1065fct 10100fct 10150fct peak repet i tiv e r e v e rse volt age w o r k i n g p e ak re ve r s e v o l t a g e dc bl ocki ng vo l t age v rrm v rw m v r 20 30 45 50 60 65 100 150 rm s re ve r s e v o lta g e v r(rms ) 1 4 2 1 31.5 3 5 4 2 45.5 7 0 105 a verage rectif ied output current @ t c = 95c i f 10 non-repeti ti v e pe ak for w a r d su r g e cur r e nt 8.3ms s i ngle ha lf sine- w av e super i mposed on r a ted l o ad (j edec m e thod) if sm 150 for w a r d vo l t age @ i f = 5.0 a v f 0.55 0.80 0.90 peak rev e rse current @t a = 25c a t rated dc blocking volt age @t a = 100 c i rm 0.1 15 0.025 10 t y pi cal juncti on capaci tance (note 1) c j 280 oper ati ng and sto r age tempe r atur e range t j , t st g -55 to +150 units volts volts volts pf j 10200fct 200 140 1040fct 1080fct mbr mbr mbr mbr mbr mbr mbr mbr mbr mbr 40 80 28 56 0.1 6.0 350 200 0.7 0.75 amps ma amps typical thermal resistance 4.5 r jc j /w .406(10.3) max. .137(3.5) .118(3.0) .055(1.4) .039(1.0) .035(0.9) .011(0.3) .1(2.55) .1(2.55) .59(15.00) .50(12.70) .161(4.1) max. .606(15.4) .583(14.8) .272(6.9) .248(6.3) .189(4.8) .165(4.2) .130(3.3) max. .032(0.8) max. .138(3.50) .100(2.55) .071(1.80) max.
http://www.yeashin.com 2 rev.03 20141209 mbr1020fct~mbr10200fct device characteristics fig.2- typical instantaneous forward characteristic fig.1- forward current derating curve fig.3- typical reverse characteristic instantaneous reverse current, milamperes 0 100 200 300 100 10 1.0 0.1 0.01 t = 100 c c o t=75c c o t=25c c o peak forward surge current, fig.4- maximum non-repetitive surge current no. of cycle at 60hz 150 120 110 90 70 50 30 20 10 1 2 5 10 20 50 100 8.3ms single half since-wave jedec method percent of peak reverse voltage 20v-200v 80,100v
marking information http ?g // www . y ea shin.com ? yeashin technology co., ltd. mb r1 0xxfct xxxx line 1: ys logo and date code the first half of line 1: ys logo the second half of line 1 : yy ww: year, yy ww : week. line 2 : device name and package type mbr : schottky barrier rectifier 10 xx : 10 ampere series product. 10 xx : the peak reverse voltage of product. line 3 : device structure symbol
?Z packing ? dimension ? qty picture ?? bag/tube / ? 527mm*33mm*7mm 50 pcs inner box ? 555mm*140mm*55mm 2000 pcs carton 575mm*285mm *155mm 8000 pcs to/ito220 ? yeashin technology co., ltd. http ?g //www.yeashin.com
|
